Power Electronics Model in PathWave Device Modeling (IC-CAP)

The Power Electronics Model is an advanced device modeling software tool tailored toward the model extraction requirements of discrete semiconductor power electronic devices. It offers device modeling engineers and circuit designers the most advanced and customizable software environment for all modeling needs, including data visualization, simulation, optimization, verification, and reporting. The current version supports simple, fast and highly accurate automated model extraction for a selection of discrete power electronic specific compact and circuit models: GaN high electron mobility transistor (HEMT), Si/SiC Power metal–oxide–semiconductor field-effect transistor (MOSFET), and insulated-gate bipolar transistor (IGBT).